Diodes DSS8110Y - Manual (Page 2)

DSS8110Y
Document number: DS31679 Rev. 2 - 2
2 of 5
www.diodes.com
October 2010
© Diodes Incorporated
DSS8110Y
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
120 V
Collector-Emitter Voltage V CEO
100 V
Emitter-Base Voltage V
EBO
5 V
Collector Current - Continuous I
C
1 A
Peak Pulse Collector Current I CM
3 A
Base Current – Continuous I
B
0.3 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) @ T A = 25
°C P
D
625 mW
Thermal Resistance, Junction to Ambient (Note 4) @ T
A
= 25 °C
R θJA 200 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0 50 100 150 200
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation vs. Ambient Temperature
P
,
P
O
WE
R
DI
SS
IP
A
T
IO
N
(W
)
D
R = 200°C/W θJA
0.1 1 10 100
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
1,000
0.001
0.01
0.1
1
10
I,
C
O
LL
E
C
T
O
R
C
U
R
R
EN
T
(A
)
C
Pw = 100ms
Pw = 10ms
Pw = 1ms
DC
Pw = 100µs
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
Fig. 3 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 180°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.1