Diodes DXT2012P5 - Manual (Page 4)

DXT2012P5
Document number: DS32070 Rev. 2 - 2
4 of 7
www.diodes.com
March 2010
© Diodes Incorporated
DXT2012P5
PowerDI is a registered trademark of Diodes
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage V
(BR)CBO
-100 -120 − V I
C
= -100 μA
Collector-Emitter Breakdown Voltage (Note 7) V (BR)CEO
-60 -80 − V I C = -10mA
Emitter-Base Breakdown Voltage V
(BR)EBO
-7 -8.1 − V I
E
= -100
μA
Collector Cutoff Current I
CBO
−
<1
−
-20
-0.5
nA
μA V
CB
= -80V
V
CB
= -80V, T
amb
= 100 °C
Collector Cutoff Current
I
CER
R ≤1kΩ
−
<1
−
-20
-0.5
nA
μA V CB = -80V
V
CB
= -80V, T
amb
= 100 °C
Emitter Cutoff Current I
EBO
− <1 -10 nA V
EB
= -6V
Collector-Emitter Saturation Voltage (Note 7) V
CE(sat)
−
−
−
−
-15
-55
-90
-195
-25
-70
-120
-250
mV
I
C
= -0.1A, I
B
= -10mA
I
C
= -1A, I
B
= -100mA
I C = -2A, I B = -200mA
I C = -5A, I B = -500mA
Base-Emitter Saturation Voltage (Note 7) V
BE(sat)
− -1030 -1150 mV I
C
= -5A, I
B
= -500mA
Base-Emitter Turn-On Voltage (Note 7) V
BE(on)
− -920 -1020 mV V
CE
= -1V, I
C
= -5A
DC Current Gain (Note 7) h
FE
100
100
45
10
250
200
90
25
−
300
−
−
−
V CE = -1V, I C = -10mA
V CE = -1V, I C = -2A
V
CE
= -1V, I
C
= -5A
V
CE
= -1V, I
C
= -10A
Transition Frequency f
T
− 120 − MHz
V
CE
= -10V, I
C
= -100mA,
f = 50MHz
Output Capacitance C
obo
− 48 − pF V
CB
= -10V, f = 1MHz
Switching Times
t
on
t
off
−
−
39
370
−
−
ns
V
CC
= 10V, I
C
= 1A,
I
B1
= I
B2
= -100mA
Notes: 7. Pulse Test: Pulse width ≤300μs. Duty cycle ≤2.0%.