Diodes DXT5616U - Manual (Page 4)

DXT5616U
Datasheet Number: DS37030 Rev. 1 – 2
4 of 7
www.diodes.com
March 2014
© Diodes Incorporated
DXT5616U
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base
Breakdown Voltage
BV
CBO
100 — — V I
C
= 100µA
Collector-Emitter
Breakdown Voltage (Note 6)
BV
CEO
80 — — V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
7 — — V I
E
= 100µA
Collector Cut-off Current I
CBO
— —
0.1
20
µ A
V
CB
= 80V
V
CB
= 80V, T
A
= +150°C
Emitter Cut-off Current I
EBO
— — 20 nA V
EB
= 6V
Static Forward Current Transfer Ratio (Note 6)
h
FE
25
100
25
—
—
— —
250
—
I
C
= 5mA, V
CE
= 2V
I
C
= 150mA, V
CE
= 2V
I
C
= 500mA, V
CE
= 2V
Collector-Emitter Saturation Voltage (Note 6) V
CE(sat)
— — 0.5 V I
C
= 500mA, I
B
= 50mA
Base-Emitter Turn-On Voltage (Note 6) V
BE(on)
— — 1.0 V I
C
= 500mA, V
CE
= 2V
Transition Frequency f
T
150 — — MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Output Capacitance C obo — — 25 pF V
CB
= 10V, f = 1MHz
Delay Time t
d
— 21 —
ns
I
C
= 400mA, V
CC
= 40V,
I
B1
= 20mA, I
B2
= -20mA
Rise Time t
r
— 33 —
Storage Time with Resistive Load t
s
— 708 —
Fall Time with Resistive Load t
f
— 95 —
Notes: 6. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
0
0.2
0.4
0.6
0.8
0 1 2 3 4 5
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(A
)
C
Fig. 1 Typical Collector Current
vs. Collector-Emitter Voltage
h
, DC CU
RR
ENT
GAIN
FE
Fig. 2 Typical DC Current Gain vs. Collector Current
0
50
100
150
200
250
0.001 0.01 0.1 1 10
I , COLLECTOR CURRENT (A)
C