Diodes DXT751 - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-80 ⎯ ⎯ V I
C
= -100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-60 ⎯ ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 ⎯ ⎯ V I
E
= -100
μA, I
C
= 0
Collector Cutoff Current I CBO
⎯ ⎯
-0.1
-10
μA
μA
V
CB
= -60V, I
E
= 0
V
CB
= -60V, I
E
= 0, T
A
= 100°C
Emitter Cutoff Current I EBO
⎯ ⎯ -0.1 μA
V EB = -4V, I C = 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
⎯
-0.08
-0.2
-0.3
-0.6
V
I
C
= -1A, I
B
= -100mA
I C = -3A, I B = -300mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -0.9 -1.25 V I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage V
BE(ON)
⎯ -0.8 -1 V V
CE
= -2V, I
C
= -1A
DC Current Gain h FE
70
100
80
40
200
180
160
140
⎯
300
⎯
⎯
⎯
V
CE
= -2V, I
C
= -50mA
V CE = -2V, I C = -500mA
V
CE
= -2V, I
C
= -1A
V
CE
= -2V, I
C
= -2A
AC CHARACTERISTICS
Transition Frequency
f
T
100 145 ⎯ MHz V
CE
= -10V, I
C
= -50mA, f = 100MHz
Output Capacitance C
obo
⎯ ⎯ 30 pF V
CB
= -10V, f = 1MHz
Switching Times
t
on
t
off
⎯
⎯
45
200
⎯
⎯
ns
ns I
C
= -500mA, V
CC
= -10V
I
B1
= I
B2
= -50mA
NEW PRODUCT
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
0
0
0.2
0.4
0.6
0.8
1.0
25 50 75 100 125 150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
W
)
D
T , AMBIENT TEMPERATURE ( C)
A
°
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 3)
-V , COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
CE
0 1 2 3 4 5
DS31185 Rev. 3 - 2 2 of 4
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DXT751
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