Diodes FCX493 - Manual (Page 3)

FCX493
Da tasheet Number: DS33056 Rev. 6 - 2
3 of 6
www.diodes.com
October 2012
© Diodes Incorporated
FCX493
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
120 - - V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 7) BV
CEO
100 - - V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
7 - - V I
E
= 100µA
Collector Cutoff Current I
CBO
- - 100 nA V
CB
= 100V
Emitter Cutoff Current I EBO
- - 100 nA V EB = 5V
Emitter Cutoff Current I
CES
- - 100 nA V
CES
= 100V
DC current transfer Static ratio (Note 7) h FE
100
100
60
20
-
-
-
- -
300
-
-
-
I
C
= 1mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I C = 500mA, V CE = 10V
I
C
= 1A, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 7) V
CE(sat)
-
- -
- 0.3
0.6
V
I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Saturation Voltage (Note 7) V
BE(sat)
- - 1.15 V I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-on Voltage (Note 7) V
BE(on)
- - 1.0 V I
C
= 1A, V
CE
= 10V
Transitional Frequency f
T
150 - - MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Output capacitance C obo
- - 10 pF V CB = 10V, f = 1MHz,
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.