Diodes FCX591 - Manual (Page 4)

FCX591
Da
tasheet Number: DS33061 Rev. 4 - 2
4 of 7
www.diodes.com
February 2014
© Diodes Incorporated
FCX591
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-80 — — V I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 11) BV
CEO
-60 — — V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.1 — V I
E
= -100µA, I
C
= 0
Collector Cutoff Current I
CBO
— <1 -100 nA V
CB
= -60V
Emitter Cutoff Current I
EBO
— <1 -100 nA V
EB
= -5.6V, I
C
= 0
Emitter Cutoff Current I
CES
— <1 -100 nA V
CES
= -60V
DC current transfer Static ratio (Note 11) h
FE
100
100
80
15
220
175
155
40
—
—
300
—
—
I
C
= -1mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 11) V
CE(sat)
—
-155
-295 -300
-600
mV
I
C
= -500mA, I
B
= -50mA
I
C
= -1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 11) V
BE(sat)
— -965 -1200 mV I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-on Voltage (Note 11) V
BE(on)
— -830 -1000 mV I
C
= -1A, V
CE
= -5V
Transitional Frequency f
T
150 — — MHz
I
E
= -50mA, V
CE
= -10V
f = 100MHz
Output capacitance C
obo
— — 10 pF V
CB
= -10V, f = 1MHz,
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.