Diodes FMMT493 - Manual (Page 4)

FMMT493
Document number: DS33093 Rev. 4 - 2
4 of 7
www.diodes.com
April 2013
© Diodes Incorporated
FMMT493
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
120 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
100 — — V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
7 — — V I
E
= 100µA
Collector Cutoff Current I
CBO
— — 100 nA V
CB
= 100V
Emitter Cutoff Current I
EBO
— — 50 nA V
EB
= 5.6V
Collector Emitter Cutoff Current I
CES
— — 100 nA V
CE
= 100V
Static Forward Current Transfer Ratio (Note 9) h
FE
100
100
60
20
—
—
—
— —
300
—
—
—
I
C
= 1mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
— —
300
600 mV
mV I
C
= 500mA, I
B
= 50mA
I
C
= 1A, I
B
= 100mA
Base-Emitter Turn-On Voltage(Note 9) V
BE(on)
— — 1.0 V I
C
= 1A, V
CE
= 10V
Base-Emitter Saturation Voltage(Note 9) V
BE(sat)
— — 1.15 V I
C
= 1A, I
B
= 100mA
Output Capacitance C
obo
— — 10 pF V
CB
= 10V, f = 1MHz
Transition Frequency f
T
150 — — MHz
V
CE
= 10V, I
C
= 50mA,
f = 100MHz
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.