Diodes FMMT551 User Manual
Fmmt551, Sot23 pnp silicon planar medium power transistor, Typical characteristics
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 3 - OCTOBER 1995
FEATURES
* 60 Volt V
CEO
* 1 Amp continuous current
COMPLEMENTARY TYPE FMMT451
PARTMARKING DETAIL
551
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-80
V
Collector-Emitter Voltage
V
CEO
-60
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-2
A
Continuous Collector Current
I
C
-1
A
Base Current
I
B
-200
mA
Power Dissipation at T
amb
=25°C
P
tot
500
mW
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
SYMBOL MIN.
MAX.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
-80
V
I
C
=-100
µ
A
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
-60
V
I
C
=-10mA*
Emitter-Base Breakdown
Voltage
V
(BR)EBO
-5
V
I
E
=-100
µ
A
Collector Cut-Off Current I
CBO
-0.1
µ
A
V
CB
=-60V
Emitter Cut-Off Current
I
EBO
-0.1
µ
A
V
EB
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.35
V
I
C
=-150mA, I
B
=-15mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
-1.1
V
I
C
=-150mA, I
B
=-15mA*
Static Forward Current
Transfer Ratio
h
FE
50
10
150
I
C
=-150mA, V
CE
=-10V*
I
C
=-1A, V
CE
=-10V*
Transition
Frequency
f
T
150
MHz
I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance
C
obo
25
pF
V
CB
=-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for this device
FMMT551
C
B
E
3 - 130
3 - 129
FMMT551
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
+
-
Collector Current (Amps)
V
- (V
ol
ts)
I
+
-
Collector Current (Amps)
V
BE(on)
v I
C
V
- (V
ol
ts)
-0.6
-0.01
-10
-0.1
-1
-0.7
-0.8
-0.9
-1.0
0
-0.01
-0.1
-10
-1
-0.2
-0.4
-0.6
-0.8
I
+
/I
*
=10
I
+
-
Collector Current (Amps)
h
FE
v I
C
h
- No
rm
al
ised
G
ai
n (
%)
-0.001
-0.01
-10
-0.1
-1
20
40
60
80
100
I
+
-
Collector Current (Amps)
V
- (V
ol
ts)
-0.8
-1.0
-1.2
-1.4
-0.01
-0.1
-1
-10
-0.6
V
BE(sat)
v I
C
1
0.1
Safe Operating Area
V
CE
- Collector Emitter Voltage (V)
10V
100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
0.1V
10