Electrical characteristics, Fmmt591q, A product line of diodes incorporated – Diodes FMMT591Q User Manual
Page 4
FMMT591Q
Document number: DS37010 Rev. 1 - 2
4 of 7
www.diodes.com
March 2014
© Diodes Incorporated
FMMT591Q
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-80 — —
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BV
CEO
-60 —
—
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.1
—
V
I
E
= -100µA
Collector-Base Cutoff Current
I
CBO
—
<1
-100 nA
V
CB
= -60V
Emitter-Base Cutoff Current
I
EBO
—
<1
-100 nA
V
EB
= -5.6V
Collector-Emitter Cut-Off Current
I
CES
—
<1
-100 nA
V
CE
= -50V
Static Forward Current Transfer Ratio (Note 9)
h
FE
100
100
80
15
220
175
155
40
—
300
—
—
—
I
C
= -1mA, V
CE
= -5V
I
C
= -500mA, V
CE
= -5V
I
C
= -1A, V
CE
= -5V
I
C
= -2A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 9)
V
CE(SAT)
—
-155
-295
-180
-350
mV
I
C
= - 500mA, I
B
= -50mA
I
C
= - 1A, I
B
= -100mA
Base-Emitter Saturation Voltage (Note 9)
V
BE(SAT)
—
965
-1200 mV
I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 9)
V
BE(ON)
—
830
-1000 mV
I
C
= -1A, V
CE
= -5V
Transition Frequency
f
T
150 —
— MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Output Capacitance
C
obo
— —
10 pF
V
CB
= -10V, f = 1MHz
Note: 9.
Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.