Diodes FMMT722 - Manual (Page 4)

FMMT722
Document Number: DS33239 Rev. 4 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT722
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-70 -150 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10) BV
CEO
-70 -125 - V I
C
= -10mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.8 - V I
E
= -100µA
Collector Cutoff Current I
CBO
- <1 -100 nA V
CB
= -60V
Emitter Cutoff Current I
EBO
- <1 -100 nA V
EB
= -5.6V
Collector Emitter Cutoff Current I
CES
- <1 -100 nA V
CE
= -60V
Static Forward Current Transfer Ratio (Note 10) h
FE
300 470 -
-
I
C
= -10mA, V
CE
= -5V
300 450 - I
C
= -0.1A, V
CE
= -5V
175 275 - I
C
= -1A, V
CE
= -5V
40 60 - I
C
= -1.5A, V
CE
= -5V
- 10 - I
C
= -3A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 10) V
CE(sat)
- -35 -50
mV
I
C
=- 0.1A, I
B
= -10mA
- -135 -200 I
C
= -0.5A, I
B
= -20mA
- -140 -220 I
C
= -1A, I
B
= -100mA
- -175 -260 I
C
= -1.5A, I
B
= -200mA
Base-Emitter Turn-On Voltage(Note 10) V
BE(on)
- -0.78 -1.0 V I
C
= -1.5A, V
CE
= -5V
Base-Emitter Saturation Voltage(Note 10) V
BE(sat)
- -0.94 -1.05 V I
C
= -1.5A, I
B
= -200mA
Output Capacitance C
obo
- 14 20 pF V
CB
= -10V, f = 1MHz
Transition Frequency f
T
150 200 - MHz
V
CE
= -10V, I
C
= -50mA,
f = 100MHz
Turn-On Time t
on
- 40 - ns V
CC
= -50V, I
C
= -0.5A
I
B1
= I
B2
= -50mA Turn-Off Time t
off
- 700 - ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%