Electrical characteristics, Fzt751q, A product line of diodes incorporated – Diodes FZT751Q User Manual
Page 4
FZT751Q
Document Number DS36963 Rev. 1 - 2
4 of 7
March 2014
© Diodes Incorporated
FZT751Q
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
-80
V
I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
-60
V
I
C
= -10mA
Emitter-Base Breakdown Voltage
BV
EBO
-7
V
I
E
= -100µA
Collector Cut-off Current
I
CBO
<1
-100 nA
V
CB
= -60V
-10 µA
V
CB
= -60V, T
amb
= +100°C
Emitter Cut-off Current
I
EBO
<1
-100 nA
V
EB
= -4V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
-0.15 -0.3
V
I
C
= -1A, I
B
= -100mA
-0.45 -0.6
I
C
= -3A, I
B
= -300mA
Base-Emitter Saturation Voltage (Note 10)
V
CE(sat)
-0.9 -1.25 V I
C
= -1A, I
B
= -100mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
-0.8 -1.0 V I
C
= -1A, V
CE
= -2V
DC Current Gain (Note 10)
h
FE
70 200
I
C
= -50mA, V
CE
= -2V
100 200 300
I
C
= -500mA, V
CE
= -2V
80 170
I
C
= -1A, V
CE
= -2V
40 150
I
C
= -2A, V
CE
= -2V
Current Gain-Bandwidth Product
f
T
100 140
MHz
V
CE
= -5V, I
C
= -100mA
f = 100MHz
Turn-On Time
t
on
40
ns
V
CC
= -10V, I
C
= -500mA
I
B1
= I
B2
= -50mA
Turn-Off Time
t
off
450
ns
Output Capacitance
C
obo
30 pF
V
CB
= -10V, f = 1MHz
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%