Diodes FZT792A User Manual
Fzt792a
SOT223 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
ISSUE 3 - NOVEMBER 1995
FEATURES
* High gain and Very low saturation voltage
APPLICATIONS
* Battery powered circuits
COMPLEMENTARY TYPE -
FZT692B
PARTMARKING DETAIL -
FZT792A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
V
CBO
-75
V
Collector-Emitter Voltage
V
CEO
-70
V
Emitter-Base Voltage
V
EBO
-5
V
Peak Pulse Current
I
CM
-5
A
Continuous Collector Current
I
C
-2
A
Power Dissipation at T
amb
=25°C
P
tot
2
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Breakdown Voltages
V
(BR)CBO
-75
-100
V
I
C
=-100
µ
A
V
(BR)CEO
-70
-90
V
I
C
=-10mA*
V
(BR)EBO
-5
-8.5
V
I
E
=-100
µ
A
Cut-Off Currents
I
CBO
-0.1
-10
µ
A
µ
A
V
CB
=-40V
V
CB
=-40V,
T
amb
=100°C
I
EBO
-0.1
µ
A
V
EB
=-4V
Saturation Voltages
V
CE(sat)
-0.30
-0.30
-0.30
-0.45
-0.50
-0.50
V
V
V
I
C
=-500mA, I
B
=-5mA*
I
C
=-1A, I
B
=-25mA*
I
C
=-2A, I
B
=-200mA*
V
BE(sat)
-0.80 -0.95 V
I
C
=-1A, I
B
=-25mA*
FZT792A
C
C
E
B
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