Electrical characteristics, Fzt851, A product line of diodes incorporated – Diodes FZT851 User Manual
Page 4
FZT851
Document Number DS33174 Rev. 3 - 2
4 of 7
January 2013
© Diodes Incorporated
FZT851
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
150 220
−
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage
BV
CER
150 220
−
V
I
C
= 1µA, R
B
≤
1kΩ
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
60 85
−
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7 8.1
−
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
−
−
<1
−
50
1
nA
µA
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
Collector Cut-off Current
I
CER
−
−
<1
−
50
1
nA
µA
V
CB
= 120V, R
B
≤
1kΩ
V
CB
= 120V, T
A
= +100°C
Emitter Cut-off Current
I
EBO
−
<1 10 nA
V
EB
= 6V
DC Current Gain (Note 10)
h
FE
100 200
−
−
I
C
= 10mA, V
CE
= 1V
100 200 300
I
C
= 2A, V
CE
= 1V
75 120
−
I
C
= 5A, V
CE
= 1V
25 50
−
I
C
= 10A, V
CE
= 1V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
−
−
50
mV
I
C
= 100mA, I
B
= 5mA
−
−
100
I
C
= 1A, I
B
= 50mA
−
−
170
I
C
= 2A, I
B
= 50mA
−
−
375
I
C
= 6A, I
B
= 300mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
−
−
1200 mV
I
C
= 6A, I
B
= 300mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
−
−
1150 mV
I
C
= 6A, V
CE
= 1V
Current Gain-Bandwidth Product (Note 10)
f
T
−
130
−
MHz
I
C
= 100mA, V
CE
= 10V,
f = 50MHz
Output Capacitance (Note 10)
C
obo
−
45
−
pF
V
CB
= 10V, f = 1MHz
Switching Times
t
on
−
45
−
ns
I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 100mA
t
off
−
1100
−
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%