Electrical characteristics – Diodes DN350T05 User Manual
Page 2
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
DS30625 Rev. 8 - 2
2 of 4
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DN350T05
© Diodes Incorporated
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
V
(BR)CBO
350
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
350
⎯
V
I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
5.0
⎯
V
I
E
= 10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
50
nA
V
CB
= 250V, I
E
= 0
Collector Cutoff Current
I
EBO
⎯
50
nA
V
CE
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 5)
DC Current Gain
h
FE
20
30
30
20
15
⎯
⎯
200
200
⎯
⎯
I
C
= 1.0mA, V
CE
= 10V
I
C
= 10mA, V
CE
= 10V
I
C
= 30mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
⎯
⎯
0.30
0.35
0.50
1.0
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 20mA, I
B
= 2.0mA
I
C
= 30mA, I
B
= 3.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
⎯
0.75
0.80
0.90
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 20mA, I
B
= 2.0mA
I
C
= 30mA, I
B
= 3.0mA
Base-Emitter On Voltage
V
BE(ON)
⎯
2.0 V
I
C
= 100mA, V
CE
= 10V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
7.0
pF
V
CB
= 20V, f = 1.0MHz, I
E
= 0
Transition Frequency
f
T
50
⎯
MHz
V
CE
= 10V, I
C
= 20mA
Notes:
5. Short duration pulse test used to minimize self-heating effect.
100
150
200
250
300
50
0
1
10
0
50
100
25
50
75
100
125
150
175
200
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
400
0
100
I , COLLECTOR CURRENT (mA)
Fig. 2,
C
DC Current Gain vs. Collector Current