Diodes HBDM60V600W User Manual
Page 2
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
2 of 7
July 2008
© Diodes Incorporated
HBDM60V600W
Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-60
⎯
V
I
C
= -10
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-60
⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5.5
⎯
V
I
E
= -10
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
-10 nA
V
CB
= -50V, I
E
= 0
Collector Cutoff Current
I
CEX
⎯
-50
nA
V
CE
= -30V, V
EB(OFF)
= -0.5V
Base Cutoff Current
I
BL
⎯
-50 nA
V
CE
= -30V, V
EB(OFF)
= -0.5V
ON CHARACTERISTICS (Note 4)
DC Current Gain
h
FE
100
100
100
100
50
⎯
⎯
⎯
300
⎯
⎯
⎯
⎯
⎯
⎯
I
C
= -100
μA, V
CE
= -10V
I
C
= -1.0mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
-0.3
-0.5
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
-0.95
-1.3
V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
100
⎯
MHz
V
CE
= -2.0V, I
C
= -10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Turn-On Time
t
on
⎯
45 ns
Delay Time
t
d
⎯
10 ns
Rise Time
t
r
⎯
40 ns
V
CE
= -30V, I
C
= -150mA,
I
B1
= -15mA
Turn-Off Time
t
off
⎯
100 ns
Storage Time
t
s
⎯
80 ns
Fall Time
t
r
⎯
30 ns
V
CC
= -6.0V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
80
⎯
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
65
⎯
⎯
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
6
⎯
⎯
V
I
E
= 100
μA, I
C
= 0
Collector-Base Cutoff Current
I
CBO
⎯
⎯
100
nA
V
CB
= 80V, I
E
= 0
Collector Cutoff Current
I
CES
⎯
⎯
100 nA
V
CE
= 90V, V
BE
= 0
Emitter-Base Cutoff Current
I
EBO
⎯
⎯
100
nA
V
EB
= 5V, I
C
= 0
ON CHARACTERISTICS (Note 4)
250
⎯
⎯
⎯
V
CE
= 1V, I
C
= 10mA
DC Current Gain
h
FE
100
⎯
⎯
⎯
V
CE
= 1V, I
C
= 100mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
0.2
0.4
V
I
C
= 100mA, I
B
= 10mA
Base-Emitter Turn-on Voltage
V
BE(ON)
0.7 0.75
0.8 V
V
CE
= 1V, I
C
= 100mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
0.95
V
I
C
= 100mA, I
B
= 5mA
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
100
⎯
⎯
MHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Notes: 4. Short duration pulse test used to minimize self-heating effect.