Diodes DXT5401 - Manual (Page 2)

DXT5401
Document number: DS31226 Rev. 3 - 2
2 of 5
www.diodes.com
March 2010
© Diodes Incorporated
DXT5401
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-160 ⎯ V I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-150
⎯
V I
C
= -1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5.0 ⎯ V I
E
= -10 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ -50
nA
μA V
CB
= -120V, I
E
= 0
V
CB
= -120V, I
E
= 0, T
A
= 100
°C
Emitter Cutoff Current I
EBO
⎯ -50 nA V
EB
= -3.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain h
FE
50
60
50 ⎯
240
⎯
⎯
V
CE
= -5.0V, I
C
= -1.0mA
V
CE
= -5.0V, I
C
= -10mA
V
CE
= -5.0V, I
C
= -50mA
Collector-Emitter Saturation Voltage V CE(SAT)
⎯
-0.2
-0.5
V
I C = -10mA, I B = -1.0mA
I C = -50mA, I B = -5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -1.0 V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
40 200 ⎯ V
CE
= -10V, I
C
= -1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz V
CE
= -10V, I
C
= -10mA, f = 100MHz
Noise Figure NF ⎯ 8.0 dB V
CE
= -5.0V, I
C
= -200
μA, R
S
= 10
Ω, f = 1.0kHz
Notes: 4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.
0
0.2
0.4
25 50 75 100 125 150
P
,
P
O
WE
R
DIS
S
IP
A
T
IO
N (
m
W
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation
vs. Ambient Temperature (Note 3)
A
0.6
0.8
1.0
0 0 1 2 3 4 5 6 7 8 9 10
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
I,
C
O
LL
E
C
T
O
R
C
U
R
R
E
N
T
(mA
)
C
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
0
50
100
150
200
250
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B