Diodes DXT5551 - Manual

DS31225 Rev. 2 – 2 1 of 4
www.diodes.com
DXT5551
© Diodes Incorporated
DXT5551
NPN SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Complementary PNP Type Available (DXT5401)
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
NEW PROD
UC
T
SOT89-3L
3
1
2,4
BASE
COLLECTOR
EMITTER
4
3
2
1
C C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
180 V
Collector-Emitter Voltage V
CEO
160 V
Emitter-Base Voltage V
EBO
6.0 V
Collector Current I C
600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @T
A
= 25°C (Note 3) P
D
1 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3) R θJA 125
°C/W
Operating and Storage Temperature Range T j , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
180 ⎯ V I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
160 ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
6.0 ⎯ V I
E
= 10
μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 50
nA
μA V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= 100
°C
Emitter Cutoff Current I
EBO
⎯ 50 nA V
EB
= 4.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain h
FE
80
80
30 ⎯
250
⎯
⎯
V
CE
= 5.0V, I
C
= 1.0mA
V
CE
= 5.0V, I
C
= 10mA
V
CE
= 5.0V, I
C
= 50mA
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
0.15
0.20
V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯
1.0 V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= 10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
50 200 ⎯ V
CE
= 10V, I
C
= 1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz V
CE
= 10V, I
C
= 10mA, f = 100MHz
Noise Figure NF ⎯ 8.0 dB V
CE
= 5.0V, I
C
= 200
μA, R
S
= 1.0k
Ω,
f = 1.0kHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300
μs. Duty cycle ≤ 2%.
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