Diodes DXTA92 - Manual

DXTA92
PNP SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary NPN Type Available (DXTA42)
•
Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
•
Case: SOT89-3L
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
•
Weight: 0.072 grams (approximate)
NEW PROD
UC
T
SOT89-3L
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-300 V
Collector-Emitter Voltage V
CEO
-300 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-500 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
1 W
Thermal Resistance, Junction to Ambient (Note 3) R θJA 125 °C/W
Operating and Storage Temperature Range T j , T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-300 ⎯ ⎯ V I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-300 ⎯ ⎯ V I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 ⎯ ⎯ V I
E
= -100 μA, I
C
= 0
Collector-Base Cut-off Current I
CBO
⎯ ⎯ -0.25 μA V
CB
= -200V, I
E
= 0
Emitter-Base Cut-off Current I
EBO
⎯ ⎯ -0.1 μA V
EB
= -3V, I
C
= 0A
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯ ⎯ -0.5 V I
C
= -20mA, I
B
= -2mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ ⎯ -0.9 V I
C
= -20mA, I
B
= -2mA
Static Forward Current Transfer Ratio h FE
25
40
25
⎯
⎯
⎯ ⎯
⎯
⎯
V
I C = -1mA, V CE = -10V
I C = -10mA, V CE = -10V
I
C
= -30mA, V
CE
= -10V
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product f
T
50 ⎯ ⎯ MHz
I C = -10mA, V CE = -20V,
f = 100MHz
Output Capacitance C
obo
⎯ ⎯ 6 pF V
CB
= -20V, f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%.
DS31159 Rev. 4 - 2 1 of 4
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DXTA92
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