Diodes DXT696BK - Manual (Page 4)

DXT696BK
Document number: DS36574 Rev. 1 - 2
4 of 7
www.diodes.com
December 2013
© Diodes Incorporated
DXT696BK
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
180 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 11) BV
CEO
180 — — V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
7 — — V I
E
= 100µA
Collector-Base Cutoff Current I
CBO
— — 100 nA V
CB
= 140V
Emitter Cutoff Current I
EBO
— — 100 nA V
EB
= 5V
DC Current Gain (Note 11) h
FE
500
150 —
— —
—
I
C
= 100mA, V
CE
= 5V
I
C
= 200mA, V
CE
= 5V
Collector-Emitter Saturation Voltage (Note 11) V
CE(sat)
—
—
— —
—
— 200
200
250
mV
I
C
= 50mA, I
B
= 0.5mA
Ic = 100mA, I
B
= 2.0mA
I
C
= 200mA, I
B
= 5.0mA
Base-Emitter Saturation Voltage (Note 11) V
BE(sat)
— — 900 mV I
C
= 200mA, I
B
= 5mA
Base-Emitter Turn-On Voltage (Note 11) V
BE(on)
— — 900 mV I
C
= 200mA, V
CE
= 5V
Input Capacitance C
ibo
— 200 — pF V
EB
= 0.5V, f = 1MHz
Output Capacitance C
obo
— 6 — pF V
CE
= 10V, f = 1MHz
Current Gain-Bandwidth Product f
T
70 — — MHz V
CE
= 5V, I
C
= 50mA, f=50MHz
Turn-On Time t
on
— 80 — ns V
CC
= 50V, I
C
= 100mA
I
B1
= -I
B2
= 10mA Turn-Off Time t
off
— 4,400 — ns
Note: 11. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.