Diodes DZT5401 - Manual

DS31218 Rev. 2 – 2 1 of 4
www.diodes.com
DZT5401
© Diodes Incorporated
DZT5401
PNP SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
• Complementary NPN Type Available (DZT5551)
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 3)
Mechanical Data
• Case: SOT-223
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Terminal Connections: See Diagram
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
•
Weight: 0.112 grams (approximate)
2
3
4
1
NEW PROD
UC
T
SOT-223
3
1
2,4
BASE
COLLECTOR
EMITTER
4
3
2
1
C C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V CBO
-160 V
Collector-Emitter Voltage V
CEO
-150 V
Emitter-Base Voltage V
EBO
-5.0 V
Collector Current I
C
-600 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation @T
A
= 25°C (Note 3) P
D
1 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 3) R θJA 125 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-160 ⎯ V I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V (BR)CEO
-150 ⎯ V I C = -1.0mA, I B = 0
Emitter-Base Breakdown Voltage V (BR)EBO
-5.0 ⎯ V I E = -10
μA, I
C = 0
Collector Cutoff Current I CBO
⎯ -50
nA
μA V
CB
= -120V, I
E
= 0
V CB = -120V, I E = 0, T A = 150
°C
Emitter Cutoff Current I
EBO
⎯ -50 nA V
EB
= -3.0V, I
C
= 0
ON CHARACTERISTICS (Note 4)
DC Current Gain h
FE
50
60
50
⎯
240
⎯
⎯
I C = -1.0mA, V CE = -5.0V
I C = -10mA, V CE = -5.0V
I
C
= -50mA, V
CE
= -5.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.2
-0.5
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ -1.0 V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 6.0 pF V
CB
= -10V, f = 1.0MHz, I
E
= 0
Small Signal Current Gain h
fe
40 200 ⎯
V
CE
= -10V, I
C
= -1.0mA, f = 1.0kHz
Current Gain-Bandwidth Product f
T
100 300 MHz V
CE
= -10V, I
C
= -10mA, f = 100MHz
Noise Figure NF ⎯ 8.0 dB V CE = -5.0V, I C = -200
μA, R
S = 10
Ω,
f = 1.0kHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300ms. Duty cycle
≤ 2%.