Diodes DZTA92 User Manual
Dzta92, Features, Mechanical data
DS30521 Rev. 4 - 2
1 of 4
www.diodes.com
DZTA92
© Diodes Incorporated
DZTA92
PNP SURFACE MOUNT TRANSISTOR
Features
•
Epitaxial Planar Die Construction
•
Complementary NPN Type Available (DZTA42)
•
Ideally Suited for Automated Assembly Processes
•
Ideal for Medium Power Switching or Amplification Applications
•
Lead Free By Design/RoHS Compliant (Note 1)
•
"Green" Device (Note 2)
Mechanical Data
•
Case: SOT-223
•
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020C
•
Terminals: Finish - Matte Tin annealed over Copper Leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
•
Marking & Type Code Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.115 grams (approximate)
2
3
4
1
SOT-223
NEW PROD
UC
T
3
1
2,4
COLLECTOR
EMITTER
BASE
4
3
2
1
C
C
B
E
TOP VIEW
Schematic and Pin Configuration
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-300 V
Collector-Emitter Voltage
V
CEO
-300 V
Emitter-Base Voltage
V
EBO
-5 V
Base Current
I
B
-100 mA
Continuous Collector Current
I
C
-500 mA
Thermal Characteristics
Characteristic Symbol
Value
Unit
Power Dissipation @ T
A
= 25°C (Note 3)
P
d
1 W
Thermal Resistance, Junction to Ambient @ T
A
= 25°C (Note 3)
R
θJA
125
ο
C/W
Operating and Storage Temperature Range
T
j
, T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max Unit
Test
Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V
(BR)CBO
-300
⎯
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage
V
(BR)CEO
-300
⎯
⎯
V
I
C
= -1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(BR)EBO
-5
⎯
⎯
V
I
E
= -100
μA, I
C
= 0
Collector-Base Cut-Off Current
I
CBO
⎯
⎯
-0.25
μA
V
CB
= -200V, I
E
= 0
Emitter-Base Cut-Off Current
I
EBO
⎯
⎯
-0.1
μA
V
EB
= -3V, I
C
= 0
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
V
CE(SAT)
⎯
⎯
-0.5 V
I
C
= -20mA, I
B
= -2mA
Base-Emitter Saturation Voltage
V
BE(SAT)
⎯
⎯
-0.9 V
I
C
= -20mA, I
B
= -2mA
25
⎯
⎯
I
C
= -1mA, V
CE
= -10V
40
⎯
⎯
I
C
= -10mA, V
CE
= -10V
DC Current Gain
h
FE
25
⎯
⎯
V
I
C
= -30mA, V
CE
= -10V
SMALL SIGNAL CHARACTERISTICS
Gain-Bandwidth Product
f
T
50
⎯
⎯
MHz
I
C
= -10mA, V
CE
= -20V, f = 100MHz
Output Capacitance
C
obo
⎯
⎯
6 pF
V
CB
= -20V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1“ x 0.85” x 0.052”; pad layout as shown on page 4 or on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website.
4. Measured under pulsed conditions. Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d< = 2%