Diodes FCX495 - Manual (Page 3)

FCX495
Da
tasheet Number: DS33057 Rev. 6 - 2
3 of 6
www.diodes.com
February 2013
© Diodes Incorporated
FCX495
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= 25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
170 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 7) BV
CEO
150 — — V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
7 — — V I
E
= 100µA
Collector Cutoff Current I
CBO
— — 100 nA V
CB
= 150V
Emitter Cutoff Current I
EBO
— — 100 nA V
EB
= 5.6V
Emitter Cutoff Current I
CES
— — 100 nA V
CE
= 150V
DC current transfer Static ratio (Note 7) h
FE
100
100
50
10
—
—
—
— 300
—
—
—
—
—
—
— I
C
= 1mA, V
CE
= 10V
I
C
= 250mA, V
CE
= 10V
I
C
= 500mA, V
CE
= 10V
I
C
= 1A, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 7) V
CE(sat)
—
—
—
0.2
0.3
V
I
C
= 250mA, I
B
= 25mA
I
C
= 500mA, I
B
= 50mA
Base-Emitter Saturation Voltage (Note 7) V
BE(sat)
— — 1.0 V I
C
= 500mA, I
B
= 50mA
Base-Emitter Turn-on Voltage (Note 7) V
BE(on)
— — 1.0 V I
C
= 500mA, V
CE
= 10V
Transitional Frequency f
T
100 — - MHz
I
C
= 50mA, V
CE
= 10V
f = 100MHz
Output capacitance C
obo
— — 10 pF V
CB
= 10V, f = 1MHz,
Note: 7. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.