Fcx658a, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes FCX658A User Manual
Page 2
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
400
480
V
I
C
=100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO)
400
465
V
I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5
7.8
V
I
E
=100
µ
A
Collector Cut-Off
Current
I
CBO
100
nA
V
CB
=320V
Collector Cut-Off
Current
I
CES
100
nA
V
CE
=320V
Emitter Cut-Off
Current
I
EBO
100
nA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.165
0.125
0.2
V
V
V
I
C
=20mA, I
B
=1mA
I
C
=50mA, I
B
=5mA*
I
C
=100mA,
I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
0.75
0.85
V
I
C
=100mA,
I
B
=10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
0.70
0.85
V
IC=100mA, V
CE
=5V*
Static Forward
Current Transfer
Ratio
h
FE
85
100
55
35
150
170
130
90
I
C
=1mA, V
CE
=5V*
I
C
=10mA, V
CE
=10V*
I
C
=100mA, V
CE
=5V*
I
C
=200mA, V
CE
=10V*
Transition
Frequency
f
T
50
MHz
I
C
=20mA, V
CE
=20V
f=20MHz
Output Capacitance
C
obo
10
pF
V
CB
=20V, f=1MHz
Switching times
t
on
t
off
130
3300
ns
ns
I
C
=100mA, V
C
=100V
I
B1
=10mA,
I
B2
=-20mA
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
NB
For high voltage applications the appropriate industry sector PCB guidelines should be
considered with regard to voltage spacing between conductors.
FCX658A