Diodes FMMT458 - Manual (Page 4)

FMMT458
Document number: DS33088 Rev. 6 - 2
4 of 7
www.diodes.com
January 2013
© Diodes Incorporated
FMMT458
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
400 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
400 — — V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
7 — — V I
E
= 100µA
Collector Cutoff Current I
CBO
— — 100 nA V
CB
= 320V
Emitter Cutoff Current I
EBO
— — 100 nA V
EB
= 5.6V
Collector Emitter Cutoff Current I
CES
— — 100 nA V
CE
= 320V
Static Forward Current Transfer Ratio (Note 9) h
FE
100
100
15
— 300 —
I
C
= 1mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
— —
200
500 mV
mV I
C
= 20mA, I
B
= 2mA
I
C
= 50mA, I
B
= 6mA
Base-Emitter Turn-On Voltage(Note 9) V
BE(on)
— — 0.9 V I
C
= 50mA, V
CE
= 10V
Base-Emitter Saturation Voltage(Note 9) V
BE(sat)
— — 0.9 V I
C
= 50mA, I
B
= 5mA
Output Capacitance C
obo
— — 5 pF V
CB
= 20V. f = 1MHz
Transition Frequency f
T
50 — — MHz
V
CE
= 20V, I
C
= 10mA,
f = 20MHz
Turn-On Time t
on
— 135 — ns V
CE
=100V, I
C
=50mA
I
B1
= 5mA, I
B2
= -10mA Turn-Off Time t
off
— 2260 — ns
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2%.