Electrical characteristics, Fmmt459q, A product line of diodes incorporated – Diodes FMMT459Q User Manual

Page 4

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FMMT459Q

Document number: DS37019 Rev. 1 - 2

4 of 7

www.diodes.com

March 2014

© Diodes Incorporated

FMMT459Q

A Product Line of

Diodes Incorporated


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BV

CBO

500 700 — V

I

C

= 100µA

Collector-Emitter Breakdown Voltage

BV

CEV

500 700 — V

I

C

= 10µA; 0.3V > V

BE

> -1V

Collector-Emitter Breakdown Voltage (Note 10)

BV

CEO

450 500 — V

I

C

= 1mA

Emitter-Base Breakdown Voltage

BV

EBO

7 8.1 — V

I

E

= 100µA

Emitter-Base Breakdown Voltage (Reverse Blocking)

BV

ECV

6 8.1 — V

I

C

= 1µA; 0.3V > V

BC

> -6V

Collector Cutoff Current

I

CBO

— <10 100 nA

V

CB

= 450V

Emitter Cutoff Current

I

EBO

— <10 100 nA

V

EB

= 5.6V

Collector Emitter Cutoff Current

I

CES

— <10 100 nA

V

CE

= 450V

Static Forward Current Transfer Ratio (Note 10)

h

FE

50

120

70


I

C

= 30mA, V

CE

= 10V

I

C

= 50mA, V

CE

= 10V

Collector-Emitter Saturation Voltage (Note 10)

V

CE(sat)


60
70

75
90

mV
mV

I

C

= 20mA, I

B

= 2mA

I

C

= 50mA, I

B

= 6mA

Base-Emitter Turn-On Voltage (Note 10)

V

BE(on)

— 0.71 0.9 V

I

C

= 50mA, V

CE

= 10V

Base-Emitter Saturation Voltage (Note 10)

V

BE(sat)

— 0.76 0.9 V

I

C

= 50mA, I

B

= 5mA

Output Capacitance

C

obo

— — 5 pF

V

CB

= 20V, f = 1MHz

Transition Frequency

f

T

50 — — MHz

V

CE

= 20V, I

C

= 10mA,

f = 20MHz

Turn-On Time

t

on

— 113 — ns

V

C

= 100V, I

C

= 50mA

I

B1

= 5mA, I

B2

= -10mA

Turn-Off Time

t

off

— 3450 — ns

Notes:

10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.




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