Fmmt497, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes FMMT497 User Manual

Page 2

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FMMT497

Issue 4 - November 2006

2

www.zetex.com

© Zetex Semiconductors plc 2006

Electrical characteristics (at T

amb

= 25°C unless otherwise stated)

Parameter

Symbol

Min.

Typ.

Max

.

Unit

Conditions

Collector-base
breakdown voltage

V

(BR)CBO

300

V

I

C

= 100

␮A

Collector-emitter
breakdown voltage

V

CEO(sus)

300

V

I

C

= 10mA

(*)

NOTES:

(*) Measured under pulsed conditions. Pulse width = 300

␮s. Duty cycle Յ2%.

Emitter-base
breakdown voltage

V

(BR)EBO

5

V

I

E

= 100

␮A

Collector cut-off current

I

CBO

100

nA

V

CB

= 250V

Collector cut-off current

I

CES

100

nA

V

CES

= 250V

Emitter cut-off current

I

EBO

100

nA

V

EB

= 4V

Collector-emitter
saturation voltage

V

CE(sat)

0.2
0.3

V
V

I

C

= 100mA, I

B

= 10mA

I

C

= 250mA, I

B

= 25mA

Base-emitter
saturation voltage

V

BE(sat)

1.0

V

I

C

= 250mA, I

B

= 25mA

Base-emitter
turn on voltage

V

BE(on)

1.0

V

I

C

= 250mA, V

CE

= 10V

Static forward current
transfer ratio

h

FE

100

80
20

300

I

C

= 1mA, V

CE

= 10V

I

C

= 100mA, V

CE

= 10V

(*)

I

C

= 250mA, V

CE

= 10V

(*)

Transition frequency

f

T

75

MHz

I

C

= 50mA, V

CE

= 10V

f = 100MHz

output capacitance

C

obo

5

pF

V

CB

= 10V, f = 1MHz

Switching performance

td

53

ns

V

CC

= 100V, I

C

= 100mA,

Ib1 = -Ib2 = 10mA

tr

126

ns

ts

2.58

␮s

tf

228

ns

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