Diodes FMMT494 - Manual (Page 4)

FMMT494
Document number: DS33095 Rev. 4 - 2
4 of 7
www.diodes.com
October 2012
© Diodes Incorporated
FMMT494
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
140 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
120 — — V I
C
= 1mA
Emitter-Base Breakdown Voltage BV EBO
7 — — V I E = 100µA
Collector Cutoff Current I
CBO
— — 100 nA V
CB
= 120V
Emitter Cutoff Current I
EBO
— — 100 nA V
EB
= 5V
Collector Emitter Cutoff Current I CES
— — 100 nA V CE = 120V
Static Forward Current Transfer Ratio (Note 9) h
FE
100 — —
—
I
C
= 1mA, V
CE
= 10V
100 — 300 I
C
= 250mA, V
CE
= 10V
60 — — I
C
= 500mA, V
CE
= 10V
20 — — I
C
= 1A, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
— — 200
mV
I
C
= 250mA, I
B
= 25mA
— — 300 I
C
= 500mA, I
B
= 50mA
Base-Emitter Turn-On Voltage(Note 9) V BE(on)
— — 1.0 V I C = 500mA, V CE = 10V
Base-Emitter Saturation Voltage(Note 9) V
BE(sat)
— — 1.1 V I
C
= 500mA, I
B
= 50mA
Output Capacitance C
obo
— — 10 pF V
CB
= 10V, f = 1MHz
Transition Frequency f
T
100 — — MHz
V CE = 50V, I C = 10mA,
f = 100MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.