Electrical characteristics (tamb = 25˚c), Fmmt596, Electrical characteristics (t – Diodes FMMT596 User Manual
Page 2: 25°c)
FMMT596
© Zetex Semiconductors plc 2007
Electrical characteristics (T
amb
= 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown
voltage
V
(BR)CBO
-220
V
I
C
=-100
A
Collector-emitter breakdown
voltage
V
(BR)CEO
-200
V
I
C
=-10mA
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300
s. Duty cycle Յ2%.
Emitter-base breakdown
voltage
V
(BR)EBO
-5
V
I
E
=-100
A
Collector cut-off current
I
CBO
-100
nA
V
CB
=-200V
Emitter cut-off current
I
EBO
-100
nA
V
EB
=-4V
Collector-emitter cut-off
current
I
CES
-100
nA
V
CES
=-200V
Collector-emitter saturation
voltage
V
CE(sat)
-0.2
-0.35
V
V
I
C
=-100mA, I
B
=-10mA,
I
B
=-250mA,
I
B
=-25mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-1.0
V
I
C
=-250mA, I
B
=-25mA
(*)
Base-emitter turn-on voltage
V
BE(on)
-0.9
V
I
C
=-250mA,
V
CE
=-10V
(*)
Static forward current
transfer ratio
h
FE
100
I
C
=-1mA, V
CE
=-10V
100
I
C
=-100mA, V
CE
=-10V
(*)
85
300
I
C
=-250mA, V
CE
=-10V
(*)
35
I
C
=-400mA, V
CE
=-10V
(*)
Transition frequency
f
T
150
MHz
I
C
=-50mA, V
CE
=-10V,
f=100MHz
Output capacitance
C
obo
10
pF
V
CB
=-10V, f=1MHz
Switching times
td
22
ns
I
C
=-200mA, V
CC
=-80V
I
b1
=I
b2
=-20mA
tr
19
ts
472
tf
70
Switching times
td
44
ns
I
C
=-100mA, V
CC
=-80V
I
b1
=I
b2
=-10mA
tr
31
ts
665
tf
76