Diodes FMMT6520 - Manual (Page 2)

FMMT6520
Document Number: DS33123 Rev. 3 - 2
2 of 4
www.diodes.com
August 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FMMT6520
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage V
CBO
-350 V
Collector-Emitter Voltage V
CEO
-350 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I C
-500 mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation (Note 4) P
D
330 mW
Thermal Resistance, Junction to Ambient (Note 4) R θJA 379 °C/W
Thermal Resistance, Junction to Lead (Note 5) R θJL 350 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the
device is measured when operating in a steady-state condition.
5. Thermal resistance from junction to solder-point (at the end of the collector lead).
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-350 V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 6) BV
CEO
-350 V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-5 V I
E
= -10µA
Collector Cutoff Current I
CBO
-50 nA V
CB
= -250V
Emitter Cutoff Current I
EBO
-50 nA V
EB
= -3V
Static Forward Current Transfer Ratio
(Note 6)
h
FE
20
30
30
20
15
200
200
I
C
= -1mA, V
CE
= -10V
I
C
= -10mA, V
CE
= -10V
I
C
= -30mA, V
CE
= -10V
I
C
= -50mA, V
CE
= -10V
I
C
= -100mA, V
CE
= -10V
Collector-Emitter Saturation Voltage
(Note 6)
V
CE(sat)
-300
-350
-500
-1000
mV
mV
mV
mV I
C
=- 10mA, I
B
= -1mA
I
C
=- 20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
I
C
= -50mA, I
B
= -5mA
Base-Emitter Saturation Voltage(Note 6) V
BE(sat)
-750
-850
-900
mV
I
C
= -10mA, I
B
= -1mA
I
C
= -20mA, I
B
= -2mA
I
C
= -30mA, I
B
= -3mA
Base-Emitter Turn-On Voltage(Note 6) V
BE(on)
-2.0 V I
C
= -100mA, V
CE
= -10V
Output Capacitance C obo
6 pF V CB = -20V, f = 1MHz
Transition Frequency f
T
50 MHz
V
CE
= -20V, I
C
= -10mA,
f = 20MHz
Note: 6. Measured under pulsed conditions. Pulse width
≤
300 µs. Duty cycle ≤ 2%