Electrical characteristics, Fzt458, A product line of diodes incorporated – Diodes FZT458 User Manual
Page 4
FZT458
Document Number DS33133 Rev. 5 - 2
4 of 7
October 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT458
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
Collector-Base Breakdown Voltage
BV
CBO
400
−
−
V
I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 10)
BV
CEO
400
−
−
V
I
C
= 10mA
Emitter-Base Breakdown Voltage
BV
EBO
7
−
−
V
I
E
= 100µA
Collector Cut-off Current
I
CBO
−
−
100 nA
V
CB
= 320V
Collector Cut-off Current
I
CES
−
−
100 nA
V
CE
= 320V
Emitter Cut-off Current
I
EBO
−
−
100 nA
V
EB
= 4V
Collector-Emitter Saturation Voltage (Note 10)
V
CE(sat)
−
−
−
−
0.2
0.5
V
I
C
= 20mA, I
B
= 2mA
I
C
= 50mA, I
B
= 6mA
Base-Emitter Saturation Voltage (Note 10)
V
BE(sat)
−
−
0.9 V
I
C
= 50mA, I
B
= 5mA
Base-Emitter Turn-On Voltage (Note 10)
V
BE(on)
−
−
0.9 V
I
C
= 50mA, V
CE
= 10V
DC Current Gain (Note 10)
h
FE
100
100
15
−
−
−
−
300
−
I
C
= 1mA, V
CE
= 10V
I
C
= 50mA, V
CE
= 10V
I
C
= 100mA, V
CE
= 10V
Current Gain-Bandwidth Product (Note 10)
f
T
50
−
−
MHz
V
CE
= 20V, I
C
= 10mA
f = 20MHz
Output Capacitance (Note 10)
C
obo
−
−
5 pF
V
CB
= 20V. f = 1MHz
Switching Times
t
on
−
135
−
ns
I
C
=
50mA, V
CC
= 100V
I
B1
= 5mA, I
B2
= -10mA
t
off
2260
Notes:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%