Electrical characteristics, Fzt655, A product line of diodes incorporated – Diodes FZT655 User Manual

Page 4

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FZT655

Document Number DS33151 Rev. 4 - 2

4 of 7

www.diodes.com

December 2012

© Diodes Incorporated

A Product Line of

Diodes Incorporated

FZT655




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

Collector-Base Breakdown Voltage

BV

CBO

150

V

I

C

= 100µA

Collector-Emitter Breakdown Voltage (Note 9)

BV

CEO

150

V

I

C

= 1mA

Emitter-Base Breakdown Voltage

BV

EBO

7 8.1

V

I

E

= 100µA

Collector Cut-off Current

I

CBO

<10

100 nA

V

CB

= 125V

Emitter Cut-off Current

I

EBO

<10

100 nA

V

EB

= 5.6V

Collector-Emitter Saturation Voltage (Note 9)

V

CE(sat)

120

500

mV

I

C

= 500mA, I

B

= 50mA

180 500

I

C

= 1A, I

B

= 200mA

Base-Emitter Saturation Voltage (Note 9)

V

BE(sat)

0.85 1.1

V I

C

= 500mA, I

B

= 50mA

Base-Emitter Turn-On Voltage (Note 9)

V

BE(on)

0.74 1.0

V I

C

= 500mA, V

CE

= 5V

DC Current Gain (Note 9)

h

FE

50 85

I

C

= 10mA, V

CE

= 5V

50 100 300

I

C

= 500mA, V

CE

= 5V

20 50

I

C

= 1A, V

CE

= 5V

Current Gain-Bandwidth Product

f

T

30

MHz

V

CE

= 20V, I

C

= 10mA,

f = 20MHz

Output Capacitance (Note 9)

C

obo

20 pF

V

CB

= 10V, f = 1MHz

Notes:

9. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%














































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