Diodes FZT655 - Manual (Page 4)

FZT655
Document Number DS33151 Rev. 4 - 2
4 of 7
www.diodes.com
December 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FZT655
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
150 − − V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
150 − − V I
C
= 1mA
Emitter-Base Breakdown Voltage BV
EBO
7 8.1 − V I
E
= 100µA
Collector Cut-off Current I
CBO
− <10 100 nA V
CB
= 125V
Emitter Cut-off Current I EBO
− <10 100 nA V EB = 5.6V
Collector-Emitter Saturation Voltage (Note 9) V CE(sat)
− 120 500
mV
I
C
= 500mA, I
B
= 50mA
− 180 500 I
C
= 1A, I
B
= 200mA
Base-Emitter Saturation Voltage (Note 9) V BE(sat)
− 0.85 1.1 V I
C = 500mA, I B = 50mA
Base-Emitter Turn-On Voltage (Note 9) V
BE(on)
− 0.74 1.0 V I
C
= 500mA, V
CE
= 5V
DC Current Gain (Note 9) h FE
50 85 −
−
I
C
= 10mA, V
CE
= 5V
50 100 300 I C = 500mA, V CE = 5V
20 50 −
I
C
= 1A, V
CE
= 5V
Current Gain-Bandwidth Product f
T
30 − − MHz
V
CE
= 20V, I
C
= 10mA,
f = 20MHz
Output Capacitance (Note 9) C
obo
− − 20 pF V
CB
= 10V, f = 1MHz
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%