Diodes FZT956 - Manual (Page 4)

FZT956
Da
tasheet Number: DS36119 Rev. 4 - 2
4 of 7
www.diodes.com
November 2012
© Diodes Incorporated
FZT956
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ. Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-220 -300 - V I
C
= -100µA
Collector-Emitter Breakdown Voltage (Note 9) BV
CER
-220 -300 - V I
C
= -1µA, R
B
≤ 1k Ω
Collector-Emitter Breakdown Voltage (Note 9) BV
CEO
-200 -240 - V I
C
= -1mA
Emitter-Base Breakdown Voltage BV
EBO
-7 -8.3 - V I
E
= -100µA
Collector Cutoff Current I
CBO
-
-
-
-
-50
-1
nA
µ A
V CB = -200V
V
CB
= -200V, T
A
= +100°C
Collector Cutoff Current
I
CER
R ≤ 1k Ω
-
-
-
-
-50
-1
nA
µA
V
CB
= -200V
V
CB
= -200V, T
A
= +100°C
Emitter Cutoff Current I EBO
- - -10 nA V EB = -6V
DC current transfer Static ratio (Note 9) h
FE
100 200 -
-
I
C
= -10mA, V
CE
= -5V
100 200 300 I
C
= -1A, V
CE
= -5V
50 150 - I
C
= -2A, V
CE
= -5V
- 10 - I
C
= -5A, V
CE
= -5V
Collector-Emitter Saturation Voltage (Note 9) V
CE(sat)
- -30 -50
mV
I
C
= -100mA, I
B
= -10mA
- -120 -165 I
C
= -1A, I
B
= -100mA
- -168 -275 I C = -2A, I B = -400mA
Base-Emitter Saturation Voltage (Note 9) V
BE(sat)
- -970 -1110 mV I
C
= -2A, I
B
= -400mA
Base-Emitter Turn-on Voltage (Note 9) V
BE(on)
- -810 -950 mV I
C
= -2A, V
CE
= -5V
Transitional Frequency (Note 9) f
T
- 110 - MHz
I C = -100mA, V CE = -10V,
f = 50MHz
Output capacitance C
obo
- 32 - pF V
CB
= -20V, f = 1MHz
Switching Time
t
ON
- 67 -
ns
V
CC
= -50V, I
C
= -1A,
I
B1
= -I
B2
= -100mA t
OFF
- 1140 -
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.