Diodes FMMT413 - Manual (Page 4)

FMMT413
Datasheet Number: DS33083 Rev.4 - 2
4 of 6
www.diodes.com
February 2014
© Diodes Incorporated
FMMT413
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
150 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage BV
CES
150 — — V I
C
= 100µA
Collector-Emitter Breakdown Voltage (Note 8) BV
CEO
50 — — V I
C
= 10mA
Emitter-Base Breakdown Voltage BV
EBO
6 — — V I
E
= 100µA
Collector-Base Cutoff Current I
CBO
— — 100 nA V
CB
= 120V
Emitter-Base Cutoff Current I
EBO
— — 100 nA V
EB
= 4V
Static Forward Current Transfer Ratio (Note 8) h
FE
50 — — — I
C
= 10mA, V
CE
= 10V
Collector-Emitter Saturation Voltage (Note 8) V
CE(sat)
— — 150 mV I
C
= 10mA, I
B
= 1mA
Base-Emitter Saturation Voltage (Note 8) V
BE(sat)
— — 800 mV I
C
= 10mA, I
B
= 1mA
Pulsed Current in Second Breakdown (Note 9) I
USB
22
25 —
— —
— A
A V
C
= 110V, C
CE
= 4.7nF
V
C
= 130V, C
CE
= 4.7nF
Collector-emitter inductance L
ce
— 2.5 — nH Standard SOT23 leads
Output Capacitance C
obo
— 2 — pF
V
CB
= 10V, I
E
= 0
f = 1MHz
Transition Frequency f
T
— 150 — MHz
V
CE
= 5V, I
C
= 10mA,
f = 20MHz
Notes: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
9. Measured with a circuit possessing an approximate loop inductance of 12nH.