Diodes DDTB (xxxx) U - Manual (Page 2)

DS30383 Rev. 6 - 2 2 of 3
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DDTD (xxxx) U
© Diodes Incorporated
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UC
T
Electrical Characteristics
@T A = 25°C unless otherwise specified
R1, R2 Types
Characteristic Symbol Min Typ Max Unit Test Condition
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
V
l(off)
-0.5
-0.5
-0.5
-0.5
-0.5
-0.3
-0.3
-0.3
⎯ ⎯ V V
CC
= -5V, I
O
= -100 μA
Input Voltage
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
V
l(on)
⎯ ⎯
-3.0
-3.0
-3.0
-3.0
-3.0
-2.0
-2.0
-2.0
V
V O = -0.3V, I O = -20mA
V O = -0.3V, I O = -20mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -10mA
V
O
= -0.3V, I
O
= -30mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
V
O
= -0.3V, I
O
= -20mA
Output Voltage V O(on)
⎯ ⎯ -0.3V V I O /I l = -50mA/-2.5mA
Input Current
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
I
l
⎯ ⎯
-7.2
-3.8
-1.8
-0.88
-28
-7.2
-3.6
-2.4
mA V
I
= -5V
Output Current I O(off)
⎯ ⎯ -0.5 μA V
CC = -50V, V I = 0V
DC Current Gain
DDTB113EU
DDTB123EU
DDTB143EU
DDTB114EU
DDTB122JU
DDTB113ZU
DDTB123YU
DDTB133HU
G
l
33
39
47
56
47
56
56
56
⎯ ⎯ ⎯ V
O
= -5V, I
O
= -50mA
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= -10V, I
E
= -5mA, f = 100MHz
* Transistor - For Reference Only
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
R1-Only, R2-Only Types
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
-50 ⎯ ⎯ V I
C
= -50 μA
Collector-Emitter Breakdown Voltage BV CEO
-40 ⎯ ⎯ V I C = -1mA
Emitter-Base Breakdown Voltage DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
BV
EBO
-5 ⎯ ⎯ V
I
E
= -50
μA
I
E
= -50
μA
I
E
= -50
μA
I
E
= -720 μA
Collector Cutoff Current I
CBO
⎯ ⎯ -0.5 μA V
CB
= -50V
Emitter Cutoff Current
DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
I
EBO
⎯
⎯
⎯
-300
⎯
-0.5
-0.5
-0.5
-580
μA V
EB
= -4V
Collector-Emitter Saturation Voltage V CE(sat)
⎯ ⎯ -0.3 V I C = -50mA, I B = -2.5mA
DC Current Transfer Ratio
DDTB123TU
DDTB143TU
DDTB114TU
DDTB114GU
h
FE
100
100
100
56
250
250
250
⎯
600
600
600
⎯
⎯ I
C
= -5mA, V
CE
= -5V
Gain-Bandwidth Product* f
T
⎯ 200 ⎯ MHz V
CE
= -10V, I
E
= 5mA, f = 100MHz
* Transistor - For Reference Only