Thermal characteristics, Electrical characteristics – Diodes DDTC (R1≠R2 SERIES) E User Manual
Page 2
DS30314 Rev. 9 - 2
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DDTC (R1
≠R2 SERIES) E
© Diodes Incorporated
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power Dissipation
P
d
150
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
R
θJA
833
°C/W
Operating and Storage Temperature Range
T
j,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
V
l(off)
0.3
0.3
0.5
0.3
0.3
0.5
0.3
0.8
0.4
1.0
0.8
⎯
⎯
V
CC
= 5V, I
O
= 100
μA
Input Voltage
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
V
l(on)
⎯
⎯
3.0
3.0
1.1
2.5
1.3
1.3
1.4
3.0
2.5
5.0
4.0
V
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 5mA
V
O
= 0.3V, I
O
= 20mA
V
O
= 0.3V, I
O
= 3mA
V
O
= 0.3V, I
O
= 5mA
V
O
= 0.3V, I
O
= 1mA
V
O
= 0.3V, I
O
= 2mA
V
O
= 0.3V, I
O
= 2mA
V
O
= 0.3V, I
O
= 2mA
V
O
= 0.3V, I
O
= 2mA
Output Voltage
V
O(on)
⎯
0.1
0.3
V
I
O
/I
l
= 5mA/0.25mA DDTC123JE
I
O
/I
l
= 5mA/0.25mA DDTC143ZE
I
O
/I
l
= 5mA/0.25mA DDTC114YE
I
O
/I
l
= 10mA/0.5mA All Others
Input Current
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
I
l
⎯
⎯
7.2
3.8
3.6
1.8
1.8
1.8
0.88
0.88
0.36
0.16
0.16
mA
V
I
= 5V
Output Current
I
O(off)
⎯
⎯
0.5
μA
V
CC
= 50V, V
I
= 0V
DC Current Gain
DDTC113ZE
DDTC123YE
DDTC123JE
DDTC143XE
DDTC143FE
DDTC143ZE
DDTC114YE
DDTC114WE
DDTC124XE
DDTC144VE
DDTC144WE
G
l
33
33
80
30
68
80
68
24
68
33
56
⎯
⎯
⎯
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 10mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
V
O
= 5V, I
O
= 5mA
Input Resistor Tolerance
ΔR
1
-30
⎯
+30
%
⎯
Resistance Ratio Tolerance
ΔR
2
/R
1
-20
⎯
+20
%
⎯
Gain-Bandwidth Product*
f
T
⎯
250
⎯
MHz
V
CE
= 10V, I
E
= 5mA, f = 100MHz
* Transistor – For Reference Only