Electrical characteristics, Typical characteristics curves – Diodes DDTCxxxxLP (R1≠R2 Series) User Manual

Page 2

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DDTCxxxxLP (R1

≠R2 Series)

Document number: DS30755 Rev. 7 - 2

2 of 7

www.diodes.com

March 2009

© Diodes Incorporated

DDTCxxxxLP (R1

R2 Series)


Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

P/N

Symbol

Min

Typ

Max

Unit

Test Condition

Off Characteristics (Note 4)
Collector-Base Breakdown Voltage

V

(BR)CBO

50

V

I

C

= 10

μA, I

E

= 0

Collector-Emitter Breakdown Voltage *

V

(BR)CEO

50

V

I

C

= 2mA, I

B

= 0

Emitter-Base Breakdown Voltage *

V

(BR)EBO

4.5

V

I

E

= 50

μA, I

C

= 0

Collector Cutoff Current *

I

CEX

0.5

μA

V

CE

= 50V, V

EB(OFF)

= 3.0V

Base Cutoff Current (I

BEX

)

I

BL

0.5

μA

V

CE

= 50V, V

EB(OFF)

= 3.0V

Collector-Base Cut Off Current

I

CBO

0.5

μA

V

CB

= 50V, I

E

= 0

Collector-Emitter Cut Off Current, I

O(OFF)

I

CEO

0.5

μA

V

CE

= 50V, I

B

= 0

Emitter-Base Cut Off Current

I

EBO

0.5

mA

V

EB

= 5V, I

C

= 0

Input-Off Voltage

V

I(OFF)

0.5

V

V

CE

= 5V, I

C

= 100

μA

On Characteristics (Note 4)

Base-Emitter Turn-On Voltage*

DDTC123JLP

V

BE(ON)

0.85

V

V

CE

= 5V, I

C

= 2mA

DDTC143ZLP

0.85

DDTC114YLP

0.95

Base-Emitter Saturation Voltage*

DDTC123JLP

V

BE(SAT)

0.98

V

I

C

= 10mA, I

B

= 1mA, V

CE

=5V

DDTC143ZLP

0.998

DDTC114YLP

0.98

Input-On Voltage

V

I(ON)

1.1

V

V

O

= 0.3V, I

C

= 5mA

Input Current

DDTC123JLP

I

I

7.2

mA

V

I

= 5V

DDTC143ZLP

1.5

DDTC114YLP

7.2

DC Current Gain

h

FE

50

V

CE

= 5V, I

C

= 1mA

70

V

CE

= 5V, I

C

= 2mA

125

V

CE

= 5V, I

C

= 5mA

150

V

CE

= 5V, I

C

= 10mA

180

V

CE

= 5V, I

C

= 50mA

Collector-Emitter Saturation Voltage

V

CE(SAT)

0.15 V

I

C

= 10mA, I

B

= 1mA

0.2 V

I

C

= 50mA, I

B

= 5mA

Output On Voltage (Same as V

CE(SAT)

) V

O(ON)

0.3

I

J

= 2.5mA, I

O

= 50mA

Input Resistor +/-30%

ΔR1

-30

30 %

Resistor Ratio

Δ (R2/R1)

-20

-20 %

Small Signal Characteristics
Transition Frequency (gain bandwidth product)

f

T

250

MHz

V

CE

= 10V, I

E

= 5mA, f = 100MHz

*Guaranteed by design

Notes: 4. Short duration pulse test used to minimize self-heating effect.

Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02

Typical Characteristics Curves

@T

A

= 25°C unless otherwise specified

0

50

100

150

200

250

300

0

25

50

75

100

125

150

175

R

= 500 C/W

θJA

°

P

,

P

O

WE

R

DIS

S

IP

A

T

IO

N (

m

W

)

D

T , AMBIENT TEMPERATURE ( C)

Fig. 1 Power Dissipation vs. Ambient Temperature

(Note 3)

A

°

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