Diodes DIMD10A - Manual (Page 2)

DIMD10A
Document number: DS30391 Rev. 5 - 2
2 of 4
www.diodes.com
September 2010
© Diodes Incorporated
DIMD10A
Electrical Characteristics NPN Section Tr2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BV
CBO
50 ⎯ ⎯ V I
C
= 50
μA
Collector-Emitter Breakdown Voltage BV
CEO
50 ⎯ ⎯ V I
C
= 1mA
Emitter-Base Breakdown Voltage BV EBO
5 ⎯ ⎯ V I E = 50
μA
Collector Cutoff Current I CBO
⎯ ⎯ 0.5 μA
V CB = 50V
Emitter Cutoff Current I
EBO
⎯ ⎯ 0.5 μA V
EB
= 4V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ ⎯ 0.3 V I
C
/I
B
= 10mA / 1.0mA
DC Current Transfer Ratio h
FE
100 250 600 ⎯ I
C
= 1mA, V
CE
= 5V
Gain-Bandwidth Product (Note 3) f
T
⎯ 250 ⎯ MHz V
CE
= 10V, I
E
= -5mA, f = 100MHz
Notes: 3. Transistor - For Reference Only
Typical Curves - Tr2
-50 0 50 100 150
250
200
150
50
100
0
T , AMBIENT TEMPERATURE ( C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
°
P
,
P
O
WE
R
DI
SSI
P
A
T
IO
N
(mW
)
D
10
1,000
100
1
1 10 100
h,
D
C
C
U
R
R
E
N
T
G
AI
N
(
N
O
R
MA
L
IZ
E
D
)
FE
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain vs. Collector Current
C
V = 10
CE
0.001
0.01
0.1
1
0 10 20 30 40 50
V,
C
O
LL
E
C
T
O
R
EM
IT
T
E
R
SA
TURA
TI
O
N
VO
L
T
AG
E
(V)
CE
(S
A
T
)
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector Emitter Saturation Voltage
vs. Collector Current
C
I /I = 10
C B
-25 C °
75 C °
25 C °
0
1
2
3
4
0 20 30
C
A
P
A
C
IT
A
N
C
E (
p
F
)
V , REVERSE VOLTAGE (V)
Fig. 4 Typical Capacitance Characteristics
R
10 5 15 25
I = 0mA
E
C
obo