Diodes FMMT734 - Manual

“SUPER SOT” SOT23 PNP SILICON
POWER DARLINGTON TRANSISTOR
ISSUE 1 – AUGUST 1997
FEATURES
* 625mW POWER DISSIPATION
* Very High h
FE
at High Current (5A)
* Extremely Low V
CE(sat)
at High Current (1A)
COMPLEMENTARY TYPE – FMMT634
PARTMARKING DETAIL – 734
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-100 V
Collector-Emitter Voltage V
CEO
-100 V
Emitter-Base Voltage V
EBO
-12 V
Peak Pulse Current I
CM
-5 A
Continuous Collector Current I
C
-800 mA
Power Dissipation P
tot
625 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
C
B
E
SOT23
FMMT734