Diodes FZTA14 - Manual

SOT223 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996
PARTMARKING DETAIL:- DEVICE TYPE IN FULL
COMPLEMENTARY TYPE :- FZTA64
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Emitter Voltage V
CES
30 V
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
10 V
Continuous Collector Current I
C
1 A
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CES
30 V I
C
=100 µ A, V
BE
=0
Collector Cut-Off
Current
I
CBO
100 nA V
CB
=30V, I
E
=0
Emitter Cut-Off Current I
EBO
100 nA V
EB
=10V, I
C
=0
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.5
1.6
V
V
I
C
=100mA, I
B
=0.1mA*
I
C
=1A, I
B
=1mA*
Base-Emitter
Turn-On Voltage
V
BE(on)
2.0 V I
C
=100mA, V
CE
=5V*
Base-Emitter
Saturation Voltage
V
BE(sat)
2.0
2.2
V
V
I
C
=100mA, I
B
=0.1mA
I
C
=1A, I
B
=1mA
Static Forward Current
Transfer Ratio
h
FE
10K
20K
5K
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=1A, V
CE
=5V*
Transition Frequency f
T
170 MHz I
C
=50mA, V
CE
=5V*
f=20MHz
*Measured under pulsed conditions. Pulse Width=300 µ s. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT38C datasheet.
FZTA14
SOT223
C
B
E
C
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