Diodes DMMT3906 - Manual (Page 2)

Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Collector-Base Breakdown Voltage
V (BR)CBO
-40 ⎯ V I C = -10
μA, I
E = 0
Collector-Emitter Breakdown Voltage V (BR)CEO
-40 ⎯ V I C = -1.0mA, I B = 0
Emitter-Base Breakdown Voltage V (BR)EBO
-5.0 ⎯ V I E = -10
μA, I
C = 0
Collector Cutoff Current I
CEX
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -3.0V
Base Cutoff Current I
BL
⎯ -50 nA V
CE
= -30V, V
EB(OFF)
= -3.0V
ON CHARACTERISTICS (Note 6)
DC Current Gain (Note 7) h FE
60
80
100
60
30
⎯
⎯
300
⎯
⎯
⎯
I
C
= -100µA, V
CE
= -1.0V
I
C
= -1.0mA, V
CE
= -1.0V
I C = -10mA, V CE = -1.0V
I
C
= -50mA, V
CE
= -1.0V
I
C
= -100mA, V
CE
= -1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯
-0.25
-0.40
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
Base-Emitter Saturation Voltage V
BE(SAT)
-0.65
⎯
-0.85
-0.95
V
I
C
= -10mA, I
B
= -1.0mA
I
C
= -50mA, I
B
= -5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯ 4.5 pF V
CB
= -5.0V, f = 1.0MHz, I
E
= 0
Input Capacitance C
ibo
⎯ 10 pF V
EB
= -0.5V, f = 1.0MHz, I
C
= 0
Input Impedance h
ie
2.0 12 k
Ω
Voltage Feedback Ratio h
re
0.1 10 x 10 -4
Small Signal Current Gain h fe
100 400 ⎯
Output Admittance h oe
3.0 60 μS
V CE = 10V, I C = 1.0mA,
f = 1.0kHz
Current Gain-Bandwidth Product f T
250 ⎯ MHz V CE = -20V, I C = -10mA, f = 100MHz
Noise Figure NF ⎯ 4.0 dB
V
CE
= -5.0V, I
C
= -100 μA,
R S = 1.0k
Ω,
f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
t d
⎯ 35 ns
Rise Time t r
⎯ 35 ns
V CC = -3.0V, I C = -10mA,
V
BE(off)
= 0.5V, I
B1
= -1.0mA
Storage Time t
s
⎯ 225 ns
Fall Time t
f
⎯ 75 ns
V
CC
= -3.0V, I
C
= -10mA,
I B1 = I B2 = -1.0mA
Notes: 6. Short duration pulse test used to minimize self-heating effect.
7. The DC current gain, h
FE
, is matched at I
C
= -10mA and V
CE
= -1.0V with typical matched tolerances of 1% and maximum of 2%.
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
D
ISSI
P
A
T
IO
N
(mW
)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs.
Ambient Temperature, Total Device
A
150
200
250
300
350
0
1
100
10
0.1 1 10 100
C
, I
N
P
U
T
C
A
P
A
C
IT
A
N
C
E (
p
F
)
C
, OUT
P
UT
CAP
A
CIT
A
NCE (
p
F
)
IB
O
OB
O
V , COLLECTOR-BASE VOLTAGE (V)
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
CB
DS30293 Rev. 6 - 2 2 of 4
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DMMT3906
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