Dmg3414u new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG3414U User Manual

Page 2: Electrical characteristics, Dmg3414u

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DMG3414U

Document number: DS31739 Rev. 4 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DMG3414U

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current (Note 5)

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

4.2
3.2

A

Pulsed Drain Current (Note 6)

I

DM

30 A



Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 5)

P

D

0.78 W

Thermal Resistance, Junction to Ambient @T

A

= +25°C

R

θJA

162 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current T

J

= 25

C I

DSS

1.0 µA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100 nA

V

GS

=

8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

0.9 V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS (ON)

19 25

mΩ

V

GS

= 4.5V, I

D

= 8.2A

22 29

V

GS

= 2.5V, I

D

= 3.3A

28 37

V

GS

= 1.8V, I

D

= 2.0A

Forward Transfer Admittance

|Y

fs

|

7

S

V

DS

= 10V, I

D

= 4A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

829.9

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

85.3

pF

Reverse Transfer Capacitance

C

rss

81.2

pF

Total Gate Charge

Q

g

9.6

nC

V

GS

= 4.5V, V

DS

= 10V, I

D

= 8.2A

Gate-Source Charge

Q

gs

1.5

nC

Gate-Drain Charge

Q

gd

3.5

nC

Turn-On Delay Time

t

D(on)

8.1

ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 10

, R

G

= 6

, I

D

= 1A

Turn-On Rise Time

t

r

8.3

ns

Turn-Off Delay Time

t

D(off)

40.1

ns

Turn-Off Fall Time

t

f

9.6

ns

Notes:

5. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

6. Repetitive rating, pulse width limited by junction temperature.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.










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