Dmg3420u new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG3420U User Manual

Page 2: Electrical characteristics, Dmg3420u

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DMG3420U

Document number: DS31867 Rev. 5 - 2

2 of 6

www.diodes.com

September 2013

© Diodes Incorporated

DMG3420U

NEW PROD

UC

T



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 6)

Steady

State

T

A

= +25°C

T

A

= +85°C

I

D

5.47
3.43

A

Pulsed Drain Current (Note 7)

I

DM

20 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 6)

P

D

0.74 W

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 6)

R

θJA

167 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage

BV

DSS

20 — — V

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

— — 1.0 µA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

— —

±100

nA

V

GS

= ±12V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage

V

GS(th)

0.5 0.95 1.2 V

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS(ON)

21 29

m

V

GS

= 10V, I

D

= 6A

25 35

V

GS

= 4.5V, I

D

= 5A

34 48

V

GS

= 2.5V, I

D

= 4A

65 91

V

GS

= 1.8V, I

D

= 2A

Forward Transfer Admittance

|Y

fs

|

— 9 — S

V

DS

= 5V, I

D

= 3.8A

Diode Forward Voltage

V

SD

— 0.75 1.0 V

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

434.7

pF

V

DS

= 10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

69.1

pF

Reverse Transfer Capacitance

C

rss

61.2

pF

Gate Resistance

R

g

1.53

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge

Q

g

5.4

nC

V

GS

= 4.5V, V

DS

= 10V,

I

D

= 6A

Gate-Source Charge

Q

gs

0.9

nC

Gate-Drain Charge

Q

gd

1.5

nC

Turn-On Delay Time

t

D(on)

— 6.5 — ns

V

DD

= 10V, V

GS

= 5V,

R

L

= 1.7

, R

G

= 6

Turn-On Rise Time

t

r

— 8.3 — ns

Turn-Off Delay Time

t

D(off)

— 21.6 — ns

Turn-Off Fall Time

t

f

— 5.3 — ns

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.





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