Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMG6968U User Manual

Page 2: Dmg6968u

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DMG6968U

Document number: DS31738 Rev. 6 - 2

2 of 6

www.diodes.com

October 2013

© Diodes Incorporated

DMG6968U




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

20 V

Gate-Source Voltage

V

GSS

±12 V

Continuous Drain Current (Note 6)

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

6.5
5.2

A

Pulsed Drain Current

I

DM

30 A




Thermal Characteristics

Characteristic Symbol

Value

Unit

Power Dissipation (Note 6)

P

D

1.3 W

Thermal Resistance, Junction to Ambient @ T

A

= +25°C

R

θJA

157 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

20

V

V

GS

= 0V, I

D

= 250µA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

1.0 µA

V

DS

= 20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±10 µA

V

GS

=

10V, V

DS

= 0V

Gate-Source Breakdown Voltage

BV

SGS

±12 — — V

V

DS

= 0V, I

G

=

250µA

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

0.5

0.9 V

V

DS

= V

GS

, I

D

= 250µA

Static Drain-Source On-Resistance

R

DS(ON)

21 25

mΩ

V

GS

= 4.5V, I

D

= 6.5A

23 29

V

GS

= 2.5V, I

D

= 5.5A

28 36

V

GS

= 1.8V, I

D

= 3.5A

Forward Transfer Admittance

|Y

fs

|

8

S

V

DS

= 10V, I

D

= 5A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

151

pF

V

DS

= 10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

91

pF

Reverse Transfer Capacitance

C

rss

32

pF

Total Gate Charge

Q

g

8.5

nC

V

GS

= 4.5V, V

DS

= 10V, I

D

= 6.5A

Gate-Source Charge

Q

gs

1.6

nC

Gate-Drain Charge

Q

gd

2.8

nC

Turn-On Delay Time

t

D(on)

54

ns

V

DD

= 10V, V

GS

= 4.5V,

R

L

= 10

, R

G

= 6

, I

D

= 1A

Turn-On Rise Time

t

r

66

ns

Turn-Off Delay Time

t

D(off)

613

ns

Turn-Off Fall Time

t

f

205

ns

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.









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