Diodes DMN2004DWK - Manual (Page 2)

DMN2004DWK
Document number: DS30935 Rev. 5 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN2004DWK
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 5) Steady
State
T
A
= +25°C
T
A
= +85°C
I
D
540
390
mA
Pulsed Drain Current (Note 6) I
DM
1.5 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
200 mW
Thermal Resistance, Junction to Ambient R
θJA
625 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-65 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV
DSS
20 ⎯ ⎯ V V
GS
= 0V, I
D
= 10µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 1 µA V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±1 µA V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(th)
0.5 ⎯ 1.0 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS (ON)
⎯
0.4
0.5
0.7
0.55
0.70
0.9
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
Forward Transfer Admittance |Y
fs
| 200 ⎯ ⎯ ms V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 7) V
SD
0.5 ⎯ 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
⎯ ⎯ 150 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ ⎯ 25 pF
Reverse Transfer Capacitance C
rss
⎯ ⎯ 20 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width ≤10µS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.