Diodes DMN2004TK - Manual (Page 2)

DMN2004TK
Document number: DS30936 Rev. 5 - 2
2 of 6
www.diodes.com
November 2010
© Diodes Incorporated
DMN2004TK
NEW PROD
UC
T
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Drain Current (Note 4) Steady
State
T
A
= 25
°C
T
A
= 85
°C
I
D
540
390
mA
Pulsed Drain Current (Note 5) I DM
1.5 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
150 mW
Thermal Resistance, Junction to Ambient R θJA 833 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV
DSS
20 ⎯ ⎯ V V
GS
= 0V, I
D
= 10 μA
Zero Gate Voltage Drain Current I
DSS
⎯
⎯
0.8
0.9 300
⎯
nA
nA V
DS
= 16V, V
GS
= 0V
V DS = 20V, V GS = 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±1 μA
V
GS
=
±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage V GS(th)
0.5 ⎯ 1.0 V V DS = V GS , I D = 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
0.4
0.5
0.7
0.55
0.70
0.9
Ω
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance |Y
fs
| 200 ⎯ ⎯ ms V
DS
=10V, I
D
= 0.2A
Diode Forward Voltage (Note 6) V
SD
0.5 ⎯ 1.4 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
⎯ ⎯ 150 pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ ⎯ 25 pF
Reverse Transfer Capacitance C rss
⎯ ⎯ 20 pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
d(on)
⎯ 8.5 ⎯ ns
V
DD
= 10V, R
L
= 47 Ω, I
D
= 200mA,
V
GEN
= 4.5V, R
G
= 10 Ω
Rise Time t
r
⎯ 9.1 ⎯ ns
Turn-Off Delay Time t
d(off)
⎯ 51 ⎯ ns
Fall Time t
f
⎯ 28 ⎯ ns
Notes: 4. Device mounted on FR-4 PCB.
5. Pulse width
≤10μS, Duty Cycle ≤1%
6. Short duration pulse test used to minimize self-heating effect.