Diodes DMN2005K - Manual (Page 2)

DMN2005K
Document number: DS30734 Rev. 7 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMN2005K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
10 V
Drain Current per element (Note 5) Continuous
Pulsed (Note 6)
I
D
300
600
mA
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
350 mW
Thermal Resistance, Junction to Ambient R
θJA
357 °C/W
Operating and Storage Temperature Range T
j
, T
STG
-65 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV
DSS
20   V V
GS
= 0V, I
D
= 100µA
Zero Gate Voltage Drain Current I
DSS
  10 µA V
DS
= 17V, V
GS
= 0V
Gate-Source Leakage I
GSS
  5 µA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(th)
0.53   0.9 V V
DS
= V
GS
, I
D
= 100µA
Static Drain-Source On-Resistance R
DS (ON)

 0.55
0. 
3.5
1.7
Ω
V
GS
= 1.8V, I
D
= 200mA
V
GS
= 2.7V, I
D
= 200mA
Forward Transfer Admittance Y
fs
 40   mS V
DS
= 3V, I
D
= 10mA
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width
10μS, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.