Electrical characteristics, Dmn2011ufde – Diodes DMN2011UFDE User Manual
Page 3
DMN2011UFDE
D
atasheet number: DS36376 Rev. 3 - 2
3 of 7
March 2014
© Diodes Incorporated
DMN2011UFDE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C
I
DSS
— — 1 µA
V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage
I
GSS
— — ±10 µA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.4 — 1.0 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS(ON)
—
6.5 9.5
mΩ
V
GS
= 4.5V, I
D
= 7A
7.5 11
V
GS
= 2.5V, I
D
= 7A
10 20
V
GS
= 1.8V, I
D
= 5A
15 35
V
GS
= 1.5V, I
D
= 3A
Forward Transfer Admittance
|Y
fs
|
— 12 — S
V
DS
= 10V, I
D
= 8.5A
Diode Forward Voltage
V
SD
— 0.7 1.2 V
V
GS
= 0V, I
S
= 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2248 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
— 295 — pF
Reverse Transfer Capacitance
C
rss
— 265 — pF
Gate Resistance
R
g
— 1.5 — Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
— 24 — nC
V
DS
= 10V, I
D
= 8.5A
Total Gate Charge (V
GS
= 10V)
Q
g
— 56 — nC
Gate-Source Charge
Q
gs
— 3.5 — nC
Gate-Drain Charge
Q
gd
— 5.1 — nC
Turn-On Delay Time
t
D(on)
— 3.6 — ns
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8Ω
Turn-On Rise Time
t
r
— 2.6 — ns
Turn-Off Delay Time
t
D(off)
— 21.6 — ns
Turn-Off Fall Time
t
f
— 13.5 — ns
Reverse Recovery Time
T
rr
— 12.8 — ns
I
F
= 8.5A, di/dt = 210A/μs
Reverse Recovery Charge
Q
rr
— 6.9 — nC
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
0.0
5.0
10.0
15.0
20.0
25.0
30.0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V
= 1.0V
GS
V
= 1.2V
GS
V
= 1.5V
GS
V
= 4.5V
GS
V
= 10V
GS
V
= 3.5V
GS
V
= 4.0V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 2.0V
GS
0
5
10
15
20
25
30
0
0.5
1
1.5
2
2.5
3
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V
= 5.0V
DS
T = 150°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A