Diodes DMN2013UFX - Manual (Page 2)

DMN2013UFX
Document number: DS36657 Rev. 2 - 2
2 of 6
www.diodes.com
March 2014
© Diodes Incorporated
DMN2013UFX
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
10
8
A
Continuous Drain Current (Note 5) V
GS
= 2.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
9
7
A
Pulsed Drain Current (Note 7) I
DM
80 A
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 5) P
D
0.78 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 5) R
θJA
163 °C/W
Power Dissipation (Note 6) P
D
2.14 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C (Note 6) R
θJA
59 °C/W
Operating and Storage Temperature Range T
J , T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 μA V
DS
= 16V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±10 μA V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.1 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
—
8.4 11.5
mΩ
V
GS
= 4.5V, I
D
= 8.5A
8.5 12.0 V
GS
= 4.0V, I
D
= 8.5A
8.6 12.5 V
GS
= 3.5V, I
D
= 8.5A
9.0 13.5 V
GS
= 3.1V, I
D
= 8A
9.6 14.0 V
GS
= 2.5V, I
D
= 8A
Forward Transfer Admittance |Y
fs
| — 18.2 — S V
DS
= 5V, I
D
= 4A
Diode Forward Voltage V
SD
— — 1.2 V V
GS
= 0V, I
S
= 8.5A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 2607 — pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 255 — pF
Reverse Transfer Capacitance C
rss
— 236 — pF
Gate Resistance R
g
— 1.2 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 32.4 — nC
V
DS
= 10V, I
D
= 8.5A
Total Gate Charge (V
GS
= 8V) Q
g
— 57.4 — nC
Gate-Source Charge Q
gs
— 3.5 — nC
Gate-Drain Charge Q
gd
— 4.0 — nC
Turn-On Delay Time t
D(on)
— 8.6 — ns
V
DS
= 10V, I
D
= 8.5A
V
GS
= 4.5V, R
G
= 1.8Ω
Turn-On Rise Time t
r
— 20.3 — ns
Turn-Off Delay Time t
D(off)
— 42.5 — ns
Turn-Off Fall Time t
f
— 13.7 — ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.