Dmn2040lts new prod uc t, Dmn2040lts – Diodes DMN2040LTS User Manual
Page 3
DMN2040LTS
Document number: DS31941 Rev. 2 - 2
3 of 6
October 2009
© Diodes Incorporated
DMN2040LTS
NEW PROD
UC
T
0.01
0.1
0
4
8
12
16
20
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
, DRA
IN-
S
OURCE
ON-
RES
IST
A
NCE
(
)
DS
(O
N)
Ω
V
= 1.8V
GS
V
= 4.5V
GS
V
= 2.5V
GS
V
= 8.0V
GS
0
0.02
0.04
0.06
0
4
8
12
16
20
I , DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
D
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, DRA
IN-
S
OUR
CE
ON-
RESIS
T
A
NCE (
NORM
A
L
IZ
E
D)
DS
(O
N
)
V
= 10V
I = 10A
GS
D
V
= 4.5V
I = 5A
GS
D
0
0.02
0.04
0.06
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , JUNCTION TEMPERATURE (°C)
J
R
, DRA
IN-
S
OUR
CE
ON-
RES
IST
A
NCE
(
)
DS
(O
N)
Ω
V
= 10V
I = 10A
GS
D
V
= 4.5V
I = 5A
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
V
,
G
A
T
E
T
HRESHO
L
D V
O
L
T
A
G
E (
V
)
GS
(T
H
)
I = 250µA
D
I = 1mA
D
0
4
8
12
16
20
0
0.4
0.6
0.8
1.0
1.2
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 8 Diode Forward Voltage vs. Current
0.2
T = 25°C
A
I
, SOURCE CURRENT
(
A
)
S