Diodes DMN2041LSD - Manual (Page 2)

DMN2041LSD
Document number: DS31964 Rev. 3 - 2
2 of 6
www.diodes.com
February 2014
© Diodes Incorporated
DMN2041LSD
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
20 V
Gate-Source Voltage V
GSS
12 V
Drain Current (Note 5) Steady
State T
A
= +25°C
T
A
= +85°C
I
D
7.63
4.92
A
Pulsed Drain Current (Note 6) I
DM
30 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P
D
1.16 W
Thermal Resistance, Junction to Ambient @T
A
= +25°C R
θJA
107.4 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
20 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1 μA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
0.5 — 1.2 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
—
19 28
mΩ
V
GS
= 4.5V, I
D
= 6A
25 41 V
GS
= 2.5V, I
D
= 5.2A
Forward Transfer Admittance |Y
fs
| — 6 — S V
DS
= 10V, I
D
= 6A
Diode Forward Voltage V
SD
— 0.7 1.2 V V
GS
= 0V, I
S
= 1.7A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 550 —
pF
V
DS
=10V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
— 88 —
Reverse Transfer Capacitance C
rss
— 81 —
Gate Resistance R
g
— 1.34 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
— 15.6 — nC V
GS
= 10V, V
DS
= 10V, I
D
= 6A
Total Gate Charge Q
g
— 7.2 —
nC
V
GS
= 4.5 V, V
DS
= 10V,
I
D
= 6A
Gate-Source Charge Q
gs
— 1 —
Gate-Drain Charge Q
gd
— 1.9 —
Turn-On Delay Time t
D(on)
— 4.69 —
ns
V
DD
= 10V, V
GEN
= 4.5V,
R
g
= 1Ω, I
D
= 6.7A
Turn-On Rise Time t
r
— 13.19 —
Turn-Off Delay Time t
D(off)
— 22.1 —
Turn-Off Fall Time t
f
— 6.43 —
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by function temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.